Summary

MRAM, non-volatile Memory, Memory Devices, etc

Description

Description

Avalanche is one of the world leaders in spin transfer torque magnetic RAM (SST MRAM) non volatile memory leveraging perpendicular magnetic tunnel junction (PMTJ) cell structure manufactured on 300mm standard CMOS process. Backed by more than 275+ granted patents around cell, circuit and system design levering MRAM, our technology and products provide breakthrough speeds, unlimited endurance and non-volatility while reducing power and cost. With such attributes, our technology will serve and exceed customer objectives as a replacement for SRAM, eflash, and ROM in embedded applications in addition to discrete SRAM, non volatile SRAM, NOR and DRAM.

Profile

  • Incorporated in
  • Established since
    2006
  • Main/Branch
    Branch

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